Sharp/tuneable UVC selectivity and extreme solar blindness in nominally undoped Ga<sub>2</sub>O<sub>3</sub> MSM photodetectors grown by pulsed laser deposition - Archive ouverte HAL Access content directly
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Sharp/tuneable UVC selectivity and extreme solar blindness in nominally undoped Ga2O3 MSM photodetectors grown by pulsed laser deposition

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Abstract

Ga2O3 layers were grown on c-sapphire substrates by pulsed laser deposition. Optical transmission spectra were coherent with a bandgap engineering from 4.9 to 6.2 eV controlled via the growth conditions. X-ray diffraction revealed that the films were mainly β-Ga2O3 (monoclinic) with strong (-201) orientation. Metal-Semiconductor-Metal photodetectors based on gold/nickel Inter- Digitated-Transducer structures were fabricated by single-step negative photolithography. 240 nm peak response sensors gave over 2 orders-of-magnitude of separation between dark and light signal with state-of-the-art solar and visible rejection ratios ((I240 : I290) of > 3 x 105 and (I240 : I400) of > 2 x 106) and dark signals of <50 pA (at a bias of -5V). Spectral responsivities showed an exceptionally narrow linewidth (16.5 nm) and peak values exhibited a slightly superlinear increase with applied bias up to a value of 6.5 A/W (i.e. a quantum efficiency of > 3000%) at 20V bias.
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Dates and versions

insu-03352076 , version 1 (29-11-2022)

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D. J. Rogers, A. Courtois, F. H. Teherani, V. E. Sandana, P. Bove, et al.. Sharp/tuneable UVC selectivity and extreme solar blindness in nominally undoped Ga2O3 MSM photodetectors grown by pulsed laser deposition. Proc. SPIE 11687, Oxide-based Materials and Devices XII, Mar 2021, OnLine, United States. pp.116872D, ⟨10.1117/12.2596194⟩. ⟨insu-03352076⟩
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