Atomic oxygen recombination on fused silica: modelling and comparison to low-temperature experiments (300 K) - INSU - Institut national des sciences de l'Univers Accéder directement au contenu
Article Dans Une Revue Journal of Physics D: Applied Physics Année : 2000

Atomic oxygen recombination on fused silica: modelling and comparison to low-temperature experiments (300 K)

G. Cartry
L. Magne

Résumé

This work is devoted to the study of atomic oxygen recombination on a glass surface, mainly in connection with atomic sources development. In this paper we present a non-stationary model for atomic oxygen recombination on a fused silica surface. Kinetics equations for oxygen atoms, taking into account heterogeneous reactions between gaseous atoms and the surface (Eley-Rideal mechanisms), as well as homogeneous processes involving surface migration of adsorbed species (Langmuir-Hinshelwood mechanisms), are solved. Surface reaction coefficients are calculated, and the choice of numerical values for surface parameters is discussed. The solution to the equations is compared to our previous experiments concerning the influence of the surface state on atomic recombination. An estimation is made of surface reaction coefficient values.

Dates et versions

insu-01722491 , version 1 (04-03-2018)

Identifiants

Citer

G. Cartry, L. Magne, Guy Cernogora. Atomic oxygen recombination on fused silica: modelling and comparison to low-temperature experiments (300 K) . Journal of Physics D: Applied Physics, 2000, 33 (11), pp.1303 - 1314. ⟨10.1088/0022-3727/33/11/309⟩. ⟨insu-01722491⟩
36 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More